Aimed at applications such as solar power inverters, UPS inverter stages and industrial variable frequency drives, the NXH160T120L2Q1SG and NXH160T120L2Q2F2SG Power Integrated Modules (PIMs) from ON Semiconductor will be introduced at electronica 2018 on November 13th in Munich.power inverter module

The devices are designed to relieve designers of the need to work with discrete IGBTs or MOSFETS. The goal is faster time-to-market, increased reliability, lower cost and significant savings in board real estate.

Both modules come in a module type in a growing series, currently with the Q0, Q1, and Q2 packages.The NXH160T120L2Q1SG and NXH160T120L2Q2F2SG devices utilize the Q1PACK and Q2PACK respectively and are aimed at inverters in the 30 kW to 50 kW range.

They incorporate field stop trench IGBTs and fast recovery diodes, resulting in lower conduction and switching losses. Designers are enabled to trade off between low VCE(SAT) and low EON / EOFF losses as the situation demands. High current operation with minimal effects from parasitic inductance is made possible by the units’ direct bond copper substrate, enabling high switching speeds. Isolation is speced at 3000 VRMS, and creepage is a solid 12.7 mm.

Both devices incorporate split T-type neutral point clamped three-level inverters built from two half-bridge 160A/1200V IGBTs with inverse diodes and both include a negative temperature coefficient thermistor. Each device also includes a second set of two neutral point IGBTs.